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| 30 4V 25 20 10V 4.5V 3.5V 20 Vds=5V 16 Id (A) 15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 24 Id (A) 12 125C 8 25C 4 0 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=10V Normalized On-Resistance 22 Vgs=4.5V Id=11A 1.4 Rds(on) (m:) 20 18 16 14 12 10 0 5 10 15 20 Vgs=10V 1.2 Vgs=4.5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 1.0E+01 125C 50 1.0E+00 Id=11A 25 Rds(on) (m:) Is (A) 125C 40 1.0E-01 30 1.0E-02 FET+SCHOTTKY 1.0E-03 25C 20 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=15V Id=11A 1500 1250 Capacitance (pF) Ciss 1000 750 500 250 0 Crss 0 5 10 15 20 25 30 Coss FET+SCHOTTKY Vgs (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Rds(on) limited 100Ps 1ms 10ms 0.1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 10Ps 50 40 Tj(max)=150C Ta=25C Power (W) Id (Amps) 10.0 30 20 10 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 |
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